unisonic technologies co., ltd UT7422-H preliminary power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r502-b36.a 40a, 30v n-channel mosfet ? description the utc UT7422-H is an n-channel mosfet, it uses utc?s advanced technology to provide the customers with a minimum on state resistance, etc. the utc UT7422-H is suitable for load switch and battery protection applications. ? features * r ds(on) < 4.3m ? @ v gs =10v, i d =20a r ds(on) < 6.0m ? @ v gs =4.5v, i d =16a * low r ds(on) ? symbol ? ordering information ordering number package pin assignment packing 123456 7 8 ut7422g-k08-3030-r dfn-8(33) s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source ut7422g-k08-3030-r (1)packing type (2)package type (3)green package (1) r: tape reel (2) k08-3030: dfn-8(33) (3) g: halogen free and lead free
UT7422-H preliminary power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-b36.a ? marking
UT7422-H preliminary power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-b36.a ? absolute maximum ratings (t a =25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 6) t c =25c i d 40 a pulsed drain current (note 4) i dm 200 a continuous drain current t a =25c i dsm 20 a avalanche current (note 4) i as , i ar 45 a avalanche energy l=0.1mh (note 4) e as , e ar 101 mj power dissipation (note 3) t c =25c p d 36 w power dissipation (note 2) t a =25c p dsm 3.1 w junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. the value of ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on ja t 10s value and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 150c may be used if the pcb allows it. 3. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 4. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. 5. the ja is the sum of the thermal impedence from junction to case jc and case to ambient. 6. the maximum current rating is package limited. ? thermal characteristics parameter symbol ratings unit junction to ambient (note 2, 5) ja 75 c/w junction-to-case jc 3.4 c/w
UT7422-H preliminary power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-b36.a ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit static parameters drain-source breakdown voltage bv dss i d =250a, v gs =0v 30 v zero gate voltage drain current i dss v ds =30v, v gs =0v 1 a v ds =30v, v gs =0v, t j =55c 5 a gate-source leakage current i gss v gs =20v, v ds =0v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1.3 1.85 2.4 v on state drain current i d ( on ) v gs =10v, v ds =5v 200 a static drain-source on -state resistance r ds(on) v gs =10v, i d =20a 3.5 4.3 m ? v gs =10v, i d =20a, t j =125c 5.5 6.8 m ? v gs =4.5v, i d =16a 4.5 6 m ? forward transconductance g fs v ds =5v, i d =20a 85 s dynamic parameters input capacitance c iss v gs =0v, v ds =15v, f=1.0mhz 1950 2445 2940 pf output capacitance c oss 270 390 510 pf reverse transfer capacitance c rss 130 220 310 pf gate resistance r g v ds =0v, v gs =0v, f=1.0mhz 1.2 2.4 3.6 ? switching parameters total gate charge q g v gs =10v, v ds =15v, i d =20a 32 41 50 nc total gate charge q g v gs =4.5v, v ds =15v, i d =20a 15 19 24 nc gate to source charge q gs 7.2 nc gate to drain charge q gd 6.6 nc turn-on delay time t d ( on ) v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? 7 ns rise time t r 5 ns turn-off delay time t d ( off ) 41.5 ns fall-time t f 10.5 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =1a,v gs =0v 0.7 1 v maximum body-diode continuous current (note) i s 40 a body diode reverse recovery time t r r i f =20a, di/dt=500a/s 17.5 22 ns body diode reverse recovery charge q r r 31 40 nc note: the maximum current rating is package limited.
UT7422-H preliminary power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-b36.a ? test circuits and waveforms v gs dut r g v ds r l resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) v gs t on t off
UT7422-H preliminary power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-b36.a ? test circuits and waveforms (cont.)
UT7422-H preliminary power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-b36.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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